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산화막CMP의 연마균일도 향상을 위한 웨이퍼의 에지형상제어

최성하, 정호빈, 박영봉, 이호준, 김형재, 정해도

Wafer Edge Profile Control for Improvement of Removal Uniformity in Oxide CMP

Sung Ha Choi, Ho Bin Jeong, Young Bong Park, Ho Jun Lee, Hyoung Jae Kim, Hae Do Jeong
JKSPE 2012;29(3):289-294.
Published online: March 1, 2012
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There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from non-uniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.

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Wafer Edge Profile Control for Improvement of Removal Uniformity in Oxide CMP
J. Korean Soc. Precis. Eng.. 2012;29(3):289-294.   Published online March 1, 2012
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Wafer Edge Profile Control for Improvement of Removal Uniformity in Oxide CMP
J. Korean Soc. Precis. Eng.. 2012;29(3):289-294.   Published online March 1, 2012
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