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광전자 소자용 아연 도핑 MgO 기반 신규 박막 연구

Nadjat Chaouch1,2, Amira Sbaihi2, Said Lakel3, Abdelghani Lakel2, Said Benramache2orcid

Investigated New Thin Films based on Zn-doped MgO for Optoelectronic Devices

Nadjat Chaouch1,2, Amira Sbaihi2, Said Lakei3, Abdelghani Lakel2, Said Benramache2orcid
JKSPE 2026;43(9):987-996. Published online: September 1, 2026
1Department of Process Engineering, Faculty of Technology, University of Batna 2
2Laboratory of Materials, Energy and Environment, University of Biskra
3Department of Material Sciences, Faculty of Exact Sciences, Natural and Life Sciences, University of Biskra

1Department of Process Engineering, Faculty of Technology, University of Batna 2
2Laboratory of Materials, Energy and Environment, University of Biskra
3Department of Material Sciences, Faculty of Exact Sciences, Natural and Life Sciences, University of Biskra
Corresponding author:  Said Benramache,
Email: s.benramache@univ-biskra.dz
Received: 4 March 2026   • Revised: 12 May 2026   • Accepted: 26 July 2026
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In this work, Mg1-xZnxO thin films were deposited on glass substrates by the pneumatic spray technique at 450°C using a 0.15 M precursor solution of magnesium acetate and zinc acetate. The effect of Zn content (x = 0, 0.3, 0.5, and 0.7%) on the structural, morphological, optical, and electrical properties of the films was examined. XRD analysis showed that all films adopted a cubic MgO structure with diffraction peaks from the (111), (200), and (220) planes, and the crystallite size grew from 8.12 to 12.49 nm as the Zn content increased. SEM images indicated that moderate Zn incorporation improved film homogeneity, whereas higher Zn contents promoted agglomeration and surface roughening. The films transmitted well in the visible region, and the optical band gap widened from 3.56 to 3.93 eV at x = 0.3. The Urbach energy also rose with Zn content, reaching a maximum of 0.695 eV at x = 0.7, which indicates greater structural disorder. FTIR spectra confirmed that Zn incorporation modifies the chemical bonding network. The sheet resistance increased markedly with Zn content, demonstrating the strong influence of Zn doping on the optical and electrical properties of MgO thin films.

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Investigated New Thin Films based on Zn-doped MgO for Optoelectronic Devices
J. Korean Soc. Precis. Eng.. 2026;43(9):987-996.   Published online September 1, 2026
Download Citation

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Investigated New Thin Films based on Zn-doped MgO for Optoelectronic Devices
J. Korean Soc. Precis. Eng.. 2026;43(9):987-996.   Published online September 1, 2026
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